NG Geok Ing  

NG Geok Ing
Associate Professor of School of Electrical & Electronic
Head of Division of Microelectronics
Phone: (65) 6790 5013, Fax: (65) 6793 3318
Office: S2-B2a-13A


Ng Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990.  From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. 

In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications.  In 1994, he was awarded the TRW Roll of Honor award on the Independent R&D project on Millimeter-Wave Power Devices. 

In 1995, he joined the Nanyang Technological University (NTU) as a Lecturer in the School of EEE and was promoted to Associate Professor in 1999.  In 1996, he was seconded to be the Programme Manager for the III-V MMICs Programme at the Microelectronics Centre in NTU.  This major program was supported by NSTB and DSO to spearhead the MMIC development effort in Singapore. From 2005 to 2009, he was again seconded to the Temasek Laboratories@NTU as the Programme Manager for the MMIC Design Centre.  In 2007, he was awarded the prestigious Singapore’s Defense Technology Prize for his outstanding technological contributions in MMIC R&D.  In 2010, he was appointed Head of the Microelectronics Division in the School of Electrical and Electronic Engineering in NTU. 

He has authored and co-authored more than 190 international journal and conference papers.  He has 7 filed patents and 1 awarded patent.  In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers.  He has also served as consultant to Oki Techno Centre Singapore Pte. Ltd., Fujitsu Quantum Devices (S) Pte. Ltd. and DSO Nationals Labs.

Research Interest

His current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material (GaAs, InP and GaN) systems for low-noise, power and MMIC applications.

    Selected Research Projects

    • GaN MISHEMT, supported by the Defence Science and Technology Agency (On-going)
    • GaN Power MMICs, supported by the Defence Science and Technology Agency (On-going)
    • Development on MMICs, supported by the DSO National Laboratories (Completed).

    Selected Publications

    • Liu Z. H., Ng G. I., Arulkumaran S., and Maung Y. K. T "Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic-layer-deposited Al2O3 as gate insulator", Accepted for publication in Applied Physics Letters, 2009.

    • Liu Z. H., Ng G. I., Arulkumaran S., Maung Y. K. T., Teo K. L., Foo S. C., Sahmuganathan V., Xu T., and Lee C. H., "High Microwave Noise Performance of AlGaN/GaN MISHEMTs on Silicon with Al2O3 Gate Insulator Grown by ALD", Accepted for publication in IEEE Electron Device Letters, 2009.

    • L. S. Liu, J. G. Ma, and G. I. Ng, “Electrothermal large-signal model of Field-Effect Transistors including frequency dispersion and charge conservation”, Accepted for publication in IEEE Transactions on Microwave Theory and Techniques, 2009.

    • Liu Z. H., Ng G. I. and Arulkumaran S., “Mechanism of increased high-frequency channel noise with PECVD SiN passivation in AlGaN/GaN HEMTs”, IEEE Electron Device Letters, Vol. 30, No. 11, November 2009, pp. 1122 – 1124.

    • H. Wang, G. I. Ng, "A Novel Technology to Form Self-Aligned Emitter Ledge for Heterostructure Bipolar Transistors", IEEE Electron Device Letters, Vol. 24 , No. 10, October 2003, pp. 628-630.